Characteristic investigation of AZO/P-Si heterojunction uv/vis sensor

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Abstract

In this paper, AZO layer (ZnO doped with Al) deposited on P-Si by spray pyrolysis. The aim of this paper is the investigation of electro-optical properties of AZO/P-Si heterojunction and AZO layer under dark and UV/Vis illumination before and after annealing process. This junction is investigated as a solar cell and UV/Vis sensor. X-ray diffraction and Scanning Electron Microscope (SEM) was used to investigation of AZO crystalline structure and morphology. Photovoltaic parameters of AZO/P-Si heterojunction is measured and results show that although contacts showed ohmic behavior, their resistivity were high that led to decrease in the solar cell efficiency. In order to increase the efficiency, contacts with low resistivity about 1Ω are needed and also TCO layer such as FTO can be used.

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References

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History

  • Receive Date: 27 November 2011
  • Revise Date: 28 August 2011
  • Accept Date: 21 April 2012

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