Modeling and simulation of Substrate temperature effect on surface reaction kinetics in GaAs thin films growth prepared via Chemical Vapor Deposition method

Document Type : Research Paper

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Abstract

In this paper, using COMSOL Muliphysics software, GaAs فاهد film growth prepared by the chemical vapour deposition Method was simulated. A mixed multiphysics model was used for this purpose. In order to compare the simulation results with those of from experiment, all of the steps and details regarding the GaAs growth reactions were utilized on the basis of an experimental research. Simulation steps including model designing, mesh analysis, chemical and thermodynamic relations and complete sets of chemical Reactions were investigated. Crucial parameters such as the flow rate, pressure and the temperature distribution within the chamber were studied and the graphical results were presented for analyzing.Then, the effect of substrate temperature on growth rate and mass distribution of thin film was investigated. Comparison between the simulation result and experimental data determines the accuracy of the represented model and also provide a promising description for dependency of film growth on substrate temperature.

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References

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History

  • Receive Date: 24 November 2015
  • Revise Date: 07 April 2018
  • Accept Date: 19 May 2018

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