influence of nitrogen amount on structural , morphological properties of WN thin films

Document Type : Research Paper

Authors

1 Department of physics, Islamic Azad university .tehran gharb

2 department of physics-tegran gharb branch - Islsmic azad university - Iran-tehran

Abstract

Tungsten nitride (WXN) thin films with crystalline structure were deposited by reactive Chemical Vapor Deposition (CVD) technique at different mixture of N2 and Ar mixture gases. Experimental data demonstrated that different N2 concentration in gas mixture, strongly affect microstructure, phase formation, grain size and texture morphology of the WXN films. According to XRD spectra, growth of tungsten nitride films promoted hexagonal WN phase for lower N2 concentration in gas mixture (N2=10%, N2=30% and N2=50%) and layers have non- homogenous morphology with rough surface. At higher N2 concentration (N2=80% and N2=100%) a phase transition was happened and two hexagonal WN and cubic W2N crystalline phases were observed. It seems that nitrogen concentration has strong effect on preferred growth orientation .The layers have smooth surfaces with low roughness. SEM micrographs for deposited films at lower nitrogen concentration in gas mixture, indicated a definite dense columnar nanostructure and non-columnar at higher nitrogen amount.

Keywords

References

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History

  • Receive Date: 15 October 2017
  • Revise Date: 15 September 2018
  • Accept Date: 16 February 2019

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