Optical Phonon Modes in a Semiconductor Nanostructure

Shahbandghouchani, Abbas

doi:10.22051/jap.2015.1206

Optical Phonon Modes in a Semiconductor Nanostructure

Author

Abbas Shahbandghouchani

10.22051/jap.2015.1206

Abstract

In the framework of continuum dielectric approximation, the surface optical (SO) phonon modes of a quantum wire of GaAs imbedded in a polar semiconductor GaxAl1-xAs have been investigated. Two branches of SO phonon modes were derived (SO1, SO2).When the wave vector, ( ), increases, the frequency of each SO modesis converged to the frequency of the single planar heterostructure

Keywords

20.1001.1.27831043.1393.4.1.5.9

References

[1] H. Panahi and M. Maleki; “Binding Energies of Donor States in GaAs- GaAlAs Quantum Wells Under Hydrostatic Pressure”; Journal of Applied Sciences 8 (2008) 636-641.

[2] Z. P. Wang and X. X. Liang; Chinese Phys. Lett. 22 (2005) 2367.

[3] J. J. Licari and R. Evard; Phys. Rev. B 15 (1997) 2254.

[4] F. Bras, S. Sauvage, P. Boucaud, J. M. Ortega, and J. M. Gerard; Semicond. Sci. Technol. 20 (2005) L10–L13.

[5] H. Hodovanets, S. L. Budko, X. Lin, V. Taufour, M. G. Kim, D. K. Pratt, A. Kreyssig, and P. C. Canfield; Phys. Rev. B 88 (2013) 054410.