عنوان مقاله [English]
نویسندگان [English]چکیده [English]
In recent years, graphene due to its high electron mobility and flexibility has been attracted much attention for the electronic applications such as high performance transistors. In this paper, we investigate the effect of temperature on the current density in a graphene nanoribbon field effect transistor (GNRFET) in which the channel is an array of armchair graphene nanoribbons. Using the minimum value of electrostatic potential which is obtained from the solution of an approximate Poisson equation with the appropriate boundary conditions, we calculate the electric current for different top gate and back gate voltages. Our results show that the effect of temperature on the current-voltage characteristic curve is quantitatively remarkable. We find out that the current density increases sharply as the temperature is raised and this increase is larger at higher temperatures. Furthermore, the slope of current density vs temperature curve is steeper for higher top gate and back gate voltages.